[1]黄亚洲,刘磊,沙菁,等.原子层沉积二硫化钼薄膜的机理及生长薄膜的质量[J].东南大学学报(自然科学版),2017,47(5):933-937.[doi:10.3969/j.issn.1001-0505.2017.05.015]
 Huang Yazhou,Liu Lei,Sha Jingjie,et al.Growth mechanism and quality of MoS2 film obtained by atomic layer deposition[J].Journal of Southeast University (Natural Science Edition),2017,47(5):933-937.[doi:10.3969/j.issn.1001-0505.2017.05.015]
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原子层沉积二硫化钼薄膜的机理及生长薄膜的质量()
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《东南大学学报(自然科学版)》[ISSN:1001-0505/CN:32-1178/N]

卷:
47
期数:
2017年第5期
页码:
933-937
栏目:
机械工程
出版日期:
2017-09-20

文章信息/Info

Title:
Growth mechanism and quality of MoS2 film obtained by atomic layer deposition
作者:
黄亚洲刘磊沙菁陈云飞
东南大学机械工程学院, 南京210096
Author(s):
Huang Yazhou Liu Lei Sha Jingjie Chen Yunfei
School of Mechanical Engineering, Southeast University, Nanjing 210096, China
关键词:
MoS2薄膜 原子层沉积 生长温度 晶体结构
Keywords:
MoS2 thin films atomic layer deposition growth temperature crystal structure
分类号:
TH145.9
DOI:
10.3969/j.issn.1001-0505.2017.05.015
摘要:
选择MoCl5和H2S作为前躯体,Si和Al2O3作为基底,利用原子层沉积制备高质量的MoS2薄膜. 利用X射线能谱仪,对在温度450~490 ℃下所生长的薄膜进行分析,分析结果表明,氧化铝更适合薄膜的生长,460 ℃是最佳的生长温度. 利用扫描电子显微镜、X射线衍射仪、拉曼光谱和透射电子显微镜对所生长薄膜的形态和晶体结构进行研究.结果表明,所生长的薄膜厚度均匀一致,100个循环后,薄膜厚度约为20 nm,薄膜的平均生长率为0.2 nm,表面成花瓣片状结构. 所生长的2H-MoS2薄膜,其(002)晶面平行于基底,(002)、(100)、(110)晶面的间距分别为0.62,0.28和0.17 nm,具有完美的六方晶体结构.
Abstract:
MoS2 films were prepared by atomic layer deposition using MoCl5 and H2S as precursors, while Si and Al2O3 were used as substrates, respectively. The thin films grown at different temperatures from 450 to 490 ℃ were observed by EDS(energy dispersive spectrometer). The results show that 460 ℃ is the most suitable growth temperature and the Al2O3 substrate is more suitable than Si as a substrate. The morphologies and the crystal structures of the thin films were studied by SEM(scanning electron microscope), XRD(X-ray diffraction), Raman spectroscopy, and TEM(transmission electron microscope). The results show that the surface of the uniform film is a petal like structure and the film thickness by 100 cycles is about 20 nm. The grown MoS2 is 2H structure and the(002)crystal plane is parallel to the substrate. It is clear that d002, d100 and d110 for lattice planes(002),(100)and(110)are 0.62, 0.28 and 0.17 nm, respectively. Furthermore, the average growth rate of the high crystallinity MoS2 film is 0.2 nm.

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备注/Memo

备注/Memo:
收稿日期: 2017-03-03.
作者简介: 黄亚洲(1988—),男,博士生;刘磊(联系人),男,博士,教授,博士生导师,liulei@seu.edu.cn.
基金项目: 国家自然科学基金资助项目(U1332134).
引用本文: 黄亚洲,刘磊,沙菁,等.原子层沉积二硫化钼薄膜的机理及所生长薄膜的质量[J].东南大学学报(自然科学版),2017,47(5):933-937. DOI:10.3969/j.issn.1001-0505.2017.05.015.
更新日期/Last Update: 2017-09-20